Infineon HEXFET N-Channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK IRF4104SPBF
- RS Stock No.:
- 651-8894
- Mfr. Part No.:
- IRF4104SPBF
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 651-8894
- Mfr. Part No.:
- IRF4104SPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 68 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 68 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 40 V, 3-Pin D2PAK AUIRF1404STRL
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 40 V, 3-Pin D2PAK AUIRF2804STRL
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 75 V, 3-Pin D2PAK IRF3007STRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRL1404STRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRLS3034TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRF1404ZSTRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRFS7437TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRFS7434TRLPBF