Infineon HEXFET N-Channel MOSFET, 75 A, 40 V, 3-Pin I2PAK IRF2804LPBF
- RS Stock No.:
- 178-1475
- Mfr. Part No.:
- IRF2804LPBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£138.60
(exc. VAT)
£166.30
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £2.772 | £138.60 |
*price indicative
- RS Stock No.:
- 178-1475
- Mfr. Part No.:
- IRF2804LPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 10.54mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 10.54mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin I2PAK IRF3205ZLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin I2PAK IRF540NLPBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-220AB AUIRF2907Z
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220 AUIRF3205
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220AB IRF2805PBF
- Infineon HEXFET N-Channel MOSFET 86 A 3-Pin TO-220AB AUIRL3705Z
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin DPAK AUIRFR024NTRL
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF