Infineon OptiMOS™ N-Channel MOSFET, 100 A, 75 V, 3-Pin I2PAK IPI100N08S207AKSA1
- RS Stock No.:
- 857-4647
- Mfr. Part No.:
- IPI100N08S207AKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 500 units)*
£742.50
(exc. VAT)
£891.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 500 | £1.485 | £742.50 |
| 1000 - 2000 | £1.343 | £671.50 |
| 2500 + | £1.309 | £654.50 |
*price indicative
- RS Stock No.:
- 857-4647
- Mfr. Part No.:
- IPI100N08S207AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | I2PAK (TO-262) | |
| Series | OptiMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 144 nC @ 10 V | |
| Length | 10mm | |
| Width | 4.4mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 9.25mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type I2PAK (TO-262) | ||
Series OptiMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 144 nC @ 10 V | ||
Length 10mm | ||
Width 4.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 9.25mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
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