Infineon HEXFET N-Channel MOSFET, 280 A, 40 V, 3-Pin TO-220 IRF2804PBF
- RS Stock No.:
- 165-7622
- Mfr. Part No.:
- IRF2804PBF
- Brand:
- Infineon
Save 29% when you buy 1000 units
Subtotal (1 tube of 50 units)*
£73.85
(exc. VAT)
£88.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 850 unit(s) ready to ship
- Plus 999,999,100 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.477 | £73.85 |
| 100 - 200 | £1.403 | £70.15 |
| 250 - 450 | £1.196 | £59.80 |
| 500 - 950 | £1.108 | £55.40 |
| 1000 + | £1.034 | £51.70 |
*price indicative
- RS Stock No.:
- 165-7622
- Mfr. Part No.:
- IRF2804PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 280 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 280 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Length 10.67mm | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
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