Nexperia PSM Type N-Channel MOSFET, 280 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40YLDX

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£1.97

(exc. VAT)

£2.36

(inc. VAT)

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  • 1,495 unit(s) shipping from 29 December 2025
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1 - 9£1.97
10 - 99£1.77
100 - 499£1.64
500 - 999£1.51
1000 +£1.36

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Packaging Options:
RS Stock No.:
219-426
Mfr. Part No.:
PSMN1R0-40YLDX
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

40V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

198W

Maximum Gate Source Voltage Vgs

4.5 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

Avalanche rated

Wave solder able

Superfast switching with soft recovery

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