Nexperia Dual N-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6 PMDXB600UNEZ

View all MOSFETs

Subtotal (1 reel of 5000 units)*

£970.00

(exc. VAT)

£1,165.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 01 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
5000 +£0.194£970.00

*price indicative

RS Stock No.:
151-3049
Mfr. Part No.:
PMDXB600UNEZ
Brand:
Nexperia
Find similar products by selecting one or more attributes.
Select all

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

DFN1010B-6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

4025 mW

Maximum Gate Source Voltage

8 V

Maximum Operating Temperature

+150 °C

Width

1.05mm

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Length

1.15mm

Number of Elements per Chip

2

Height

0.4mm

Minimum Operating Temperature

-55 °C

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ

Related links