Nexperia Dual P-Channel MOSFET, 500 mA, -20 V, 8-Pin DFN1010B-6 PMDXB950UPELZ

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Subtotal (1 reel of 5000 units)*

£475.00

(exc. VAT)

£570.00

(inc. VAT)

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Per Reel*
5000 +£0.095£475.00

*price indicative

RS Stock No.:
152-7150
Mfr. Part No.:
PMDXB950UPELZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

-20 V

Package Type

DFN1010B-6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.95V

Minimum Gate Threshold Voltage

-0.45V

Maximum Power Dissipation

4025 mW

Maximum Gate Source Voltage

8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

1.05mm

Length

1.15mm

Typical Gate Charge @ Vgs

1.19 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.36mm

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low leakage current
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
Relay driver
High-speed line driver
High-side load switch
Switching circuits

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