Nexperia Dual N-Channel MOSFET, 260 mA, 60 V, 8-Pin DFN1010B-6 NX7002BKXBZ
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 50 units)*
£15.45
(exc. VAT)
£18.55
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | £0.309 | £15.45 |
| 250 - 1200 | £0.139 | £6.95 |
| 1250 - 2450 | £0.108 | £5.40 |
| 2500 - 3700 | £0.105 | £5.25 |
| 3750 + | £0.103 | £5.15 |
*price indicative
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 260 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN1010B-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.7 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 4032 mW | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 1.05mm | |
| Typical Gate Charge @ Vgs | 1 nC @ 10 V | |
| Length | 1.15mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.36mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 260 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN1010B-6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.7 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 4032 mW | ||
Maximum Gate Source Voltage 20 V | ||
Width 1.05mm | ||
Typical Gate Charge @ Vgs 1 nC @ 10 V | ||
Length 1.15mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Height 0.36mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
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