Nexperia Dual NX3020NAKS 2 Type N-Channel Trench MOSFET, 180 mA, 30 V Enhancement, 6-Pin TSSOP NX3020NAKS,115
- RS Stock No.:
- 170-5396
- Mfr. Part No.:
- NX3020NAKS,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 50 units)*
£7.20
(exc. VAT)
£8.65
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | £0.144 | £7.20 |
| 250 - 450 | £0.056 | £2.80 |
| 500 - 1200 | £0.053 | £2.65 |
| 1250 - 2450 | £0.04 | £2.00 |
| 2500 + | £0.038 | £1.90 |
*price indicative
- RS Stock No.:
- 170-5396
- Mfr. Part No.:
- NX3020NAKS,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | Trench MOSFET | |
| Maximum Continuous Drain Current Id | 180mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NX3020NAKS | |
| Package Type | TSSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type Trench MOSFET | ||
Maximum Continuous Drain Current Id 180mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NX3020NAKS | ||
Package Type TSSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
Target applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Related links
- Nexperia NX3020NAKS Dual N-Channel MOSFET 30 V115
- Toshiba Dual N-Channel MOSFET 20 V, 6-Pin SOT-563 SSM6N35FE
- Toshiba SSM6 Dual N-Channel MOSFET 20 VF)
- Nexperia Dual N-Channel MOSFET 30 V115
- Nexperia NX3008CBKS Dual N/P-Channel MOSFET 350 mA 6-Pin SOT-363 NX3008CBKS,115
- Nexperia Dual N/P-Channel MOSFET 350 mA 6-Pin SOT-363 NX3008CBKS,115
- onsemi PowerTrench Dual N-Channel MOSFET 30 V, 6-Pin SOT-363 FDG8850NZ
- onsemi Dual N-Channel MOSFET 30 V, 6-Pin SOT-363 NTJD4001NT1G