Nexperia N-Channel MOSFET, 2.8 A, 80 V, 8-Pin DFN2020 PMPB215ENEAX

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Subtotal (1 reel of 3000 units)*

£378.00

(exc. VAT)

£453.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.126£378.00

*price indicative

RS Stock No.:
151-3071
Mfr. Part No.:
PMPB215ENEAX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

80 V

Package Type

DFN2020

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

445 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

2.1mm

Number of Elements per Chip

1

Length

2.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

4.8 nC @ 10 V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

0.65mm

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified

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