Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement, 8-Pin DFN PMPB215ENEAX

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Subtotal (1 pack of 25 units)*

£7.05

(exc. VAT)

£8.45

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225£0.282£7.05
250 - 600£0.212£5.30
625 - 1225£0.169£4.23
1250 - 2475£0.154£3.85
2500 +£0.142£3.55

*price indicative

Packaging Options:
RS Stock No.:
151-3200
Mfr. Part No.:
PMPB215ENEAX
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

445mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.8nC

Maximum Power Dissipation Pd

15.6W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

0.65mm

Standards/Approvals

No

Length

2.1mm

Width

2.1 mm

Automotive Standard

AEC-Q101

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

Tin-plated 100 % solderable side pads for optical solder inspection

AEC-Q101 qualified

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