Nexperia N-Channel MOSFET, 2.8 A, 80 V, 8-Pin DFN2020 PMPB215ENEAX

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Subtotal (1 pack of 25 units)*

£7.05

(exc. VAT)

£8.45

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225£0.282£7.05
250 - 600£0.212£5.30
625 - 1225£0.169£4.23
1250 - 2475£0.154£3.85
2500 +£0.142£3.55

*price indicative

Packaging Options:
RS Stock No.:
151-3200
Mfr. Part No.:
PMPB215ENEAX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

80 V

Package Type

DFN2020

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

445 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

2.1mm

Width

2.1mm

Typical Gate Charge @ Vgs

4.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

0.65mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified

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