Nexperia Dual N-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6 PMDXB600UNEZ

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Subtotal (1 pack of 25 units)*

£4.90

(exc. VAT)

£5.875

(inc. VAT)

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Per Pack*
25 - 100£0.196£4.90
125 - 1225£0.12£3.00
1250 - 2475£0.092£2.30
2500 - 3725£0.088£2.20
3750 +£0.084£2.10

*price indicative

Packaging Options:
RS Stock No.:
151-3178
Mfr. Part No.:
PMDXB600UNEZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

DFN1010B-6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

4025 mW

Maximum Gate Source Voltage

8 V

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Length

1.15mm

Width

1.05mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Height

0.4mm

Minimum Operating Temperature

-55 °C

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ

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