Diodes Inc P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 DMP21D6UFD-7
- RS Stock No.:
- 182-6916
- Mfr. Part No.:
- DMP21D6UFD-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)*
£111.00
(exc. VAT)
£132.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 07 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | £0.037 | £111.00 |
| 9000 - 12000 | £0.036 | £108.00 |
| 15000 + | £0.035 | £105.00 |
*price indicative
- RS Stock No.:
- 182-6916
- Mfr. Part No.:
- DMP21D6UFD-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | X1-DFN1212 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 800 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Length | 1.25mm | |
| Number of Elements per Chip | 1 | |
| Width | 1.25mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.8 nC @ 8V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.48mm | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type X1-DFN1212 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Length 1.25mm | ||
Number of Elements per Chip 1 | ||
Width 1.25mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.8 nC @ 8V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.48mm | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Very Low Gate Threshold Voltage, -1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
DC-DC Converters
Very Low Gate Threshold Voltage, -1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
DC-DC Converters
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