Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7

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Subtotal (1 reel of 3000 units)*

£123.00

(exc. VAT)

£147.00

(inc. VAT)

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RS Stock No.:
182-6892
Mfr. Part No.:
DMN2450UFD-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

1.25mm

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

0.48mm

COO (Country of Origin):
CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch

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