Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 PMXB56ENZ

Subtotal (1 reel of 5000 units)*

£415.00

(exc. VAT)

£500.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.083£415.00

*price indicative

RS Stock No.:
153-0731
Mfr. Part No.:
PMXB56ENZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

30 V

Package Type

DFN1010D-3

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

87 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

8.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

1.05mm

Length

1.15mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Height

0.36mm

Minimum Operating Temperature

-55 °C

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 49 mΩ
Very fast switching
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters

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