N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3 Nexperia PMXB43UNEZ
- RS Stock No.:
- 153-1890
- Mfr. Part No.:
- PMXB43UNEZ
- Brand:
- Nexperia
Available to back order for despatch 19/08/2024
Added
Price Each (In a Pack of 25)
£0.297
(exc. VAT)
£0.356
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 100 | £0.297 | £7.425 |
| 125 - 1225 | £0.211 | £5.275 |
| 1250 - 2475 | £0.205 | £5.125 |
| 2500 - 3725 | £0.20 | £5.00 |
| 3750 + | £0.196 | £4.90 |
| *price indicative | ||
- RS Stock No.:
- 153-1890
- Mfr. Part No.:
- PMXB43UNEZ
- Brand:
- Nexperia
Technical Reference
Legislation and Compliance
Product Details
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 42 mΩ
1 kV ESD protected
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 42 mΩ
1 kV ESD protected
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | DFN1010D-3 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 120 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.9V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 8.33 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 8 V |
| Number of Elements per Chip | 1 |
| Width | 1.05mm |
| Length | 1.15mm |
| Typical Gate Charge @ Vgs | 5.7 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Height | 0.36mm |
| Minimum Operating Temperature | -55 °C |
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