Nexperia N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3 PMXB43UNEZ

Subtotal (1 reel of 5000 units)*

£785.00

(exc. VAT)

£940.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.157£785.00

*price indicative

RS Stock No.:
153-0741
Mfr. Part No.:
PMXB43UNEZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

20 V

Package Type

DFN1010D-3

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

8.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Typical Gate Charge @ Vgs

5.7 nC @ 10 V

Length

1.15mm

Number of Elements per Chip

1

Width

1.05mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.36mm

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 42 mΩ
1 kV ESD protected
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters

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