Infineon OptiMOS™ 3 N-Channel MOSFET, 3.2 A, 60 V, 4-Pin SOT-89 BSS606NH6327XTSA1
- RS Stock No.:
- 110-7170
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 50 units)*
£4.70
(exc. VAT)
£5.65
(inc. VAT)
FREE delivery for orders over £50.00
- 1,000 unit(s) shipping from 05 February 2026
Units | Per unit | Per Pack* |
---|---|---|
50 + | £0.094 | £4.70 |
*price indicative
- RS Stock No.:
- 110-7170
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.2 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-89 | |
Series | OptiMOS™ 3 | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Maximum Drain Source Resistance | 90 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.3V | |
Minimum Gate Threshold Voltage | 1.3V | |
Maximum Power Dissipation | 1 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Width | 2.5mm | |
Typical Gate Charge @ Vgs | 3.7 nC @ 5 V | |
Length | 4.5mm | |
Number of Elements per Chip | 1 | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.1V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-89 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 2.5mm | ||
Typical Gate Charge @ Vgs 3.7 nC @ 5 V | ||
Length 4.5mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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