Infineon OptiMOS™ 3 N-Channel MOSFET, 3.2 A, 60 V, 4-Pin SOT-89 BSS606NH6327XTSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

2.5mm

Length

4.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.7 nC @ 5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.5mm