Infineon OptiMOS 3 Type N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1
- RS Stock No.:
- 110-7170
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 50 units)*
£4.70
(exc. VAT)
£5.65
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 + | £0.094 | £4.70 |
*price indicative
- RS Stock No.:
- 110-7170
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 3 | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.5 mm | |
| Height | 1.5mm | |
| Length | 4.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-36-979 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 3 | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Width 2.5 mm | ||
Height 1.5mm | ||
Length 4.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-36-979 | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin SOT-89 BSS606NH6327XTSA1
- Nexperia N-Channel MOSFET 30 V, 4-Pin DFN1010D-3 PMXB56ENZ
- Nexperia N-Channel MOSFET 12 V, 4-Pin DFN1010D-3 PMXB40UNEZ
- Nexperia N-Channel MOSFET 20 V, 4-Pin DFN1010D-3 PMXB43UNEZ
- onsemi N-Channel MOSFET 20 V, 3-Pin SOT-23 NTR4501NT1G
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin SOT-223 FDT86106LZ
- Nexperia P-Channel MOSFET -12 V, 4-Pin DFN1010D-3 PMXB65UPEZ
- Nexperia N-Channel MOSFET 60 V SOT-669 PSMN7R0-60YS,115