Infineon OptiMOS™ 3 N-Channel MOSFET, 3.2 A, 60 V, 3-Pin SOT-89 BSS606NH6327XTSA1
- RS Stock No.:
- 145-8766
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)*
£151.00
(exc. VAT)
£181.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 19 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | £0.151 | £151.00 |
| 2000 - 4000 | £0.143 | £143.00 |
| 5000 + | £0.134 | £134.00 |
*price indicative
- RS Stock No.:
- 145-8766
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-89 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 2.5mm | |
| Length | 4.5mm | |
| Typical Gate Charge @ Vgs | 3.7 nC @ 5 V | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-89 | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 2.5mm | ||
Length 4.5mm | ||
Typical Gate Charge @ Vgs 3.7 nC @ 5 V | ||
Forward Diode Voltage 1.1V | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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