N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1
- RS Stock No.:
- 165-8068
- Mfr. Part No.:
- IPB200N25N3GATMA1
- Brand:
- Infineon
4000 In stock - FREE next working day delivery available
Added
Price Each (On a Reel of 1000)
£3.741
(exc. VAT)
£4.489
(inc. VAT)
| Units | Per unit | Per Reel* |
| 1000 + | £3.741 | £3,741.00 |
| *price indicative | ||
- RS Stock No.:
- 165-8068
- Mfr. Part No.:
- IPB200N25N3GATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Product Details
Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Summary of Features
•Industry’s lowest R DS(on)
•Lowest Q g and Q gd
•World’s lowest FOM RoHS comliant − halogen free MSL 1 rated
•Lowest Q g and Q gd
•World’s lowest FOM RoHS comliant − halogen free MSL 1 rated
Benefits
•Highest efficiency
•Highest Power density
•Lowest board space consumption
•Minimal device paralleling required
•System cost improvement
•Enviromentally friendly
•Easy-to-design-in products
•Highest Power density
•Lowest board space consumption
•Minimal device paralleling required
•System cost improvement
•Enviromentally friendly
•Easy-to-design-in products
Potential Applications
•Synchronous rectification for AC-DC SMPS
•Motor control for 48V–110V systems
•Isolated DC-DC converters
•Lighting for 110V AC networks
•HID lamps
•Class D audio amplifiers
•Uninterruptable power supplies (UPS)
•Motor control for 48V–110V systems
•Isolated DC-DC converters
•Lighting for 110V AC networks
•HID lamps
•Class D audio amplifiers
•Uninterruptable power supplies (UPS)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 64 A |
| Maximum Drain Source Voltage | 250 V |
| Series | OptiMOS 3 |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 9.45mm |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V |
| Length | 10.31mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |
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