Infineon OptiMOS™ 3 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

RS Stock No.:: 165-8068
Mfr. Part No.:: IPB200N25N3GATMA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Subtotal (1 reel of 1000 units)*

£3,132.00

(exc. VAT)

£3,758.00

(inc. VAT)

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Plus 2,000 unit(s) shipping from 27 October 2025

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Units	Per unit	Per Reel*
1000 +	£3.132	£3,132.00

*price indicative

RS Stock No.:: 165-8068
Mfr. Part No.:: IPB200N25N3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	64 A
	Maximum Drain Source Voltage	250 V
	Series	OptiMOS™ 3
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.45mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	64 nC @ 10 V
	Length	10.31mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	4.57mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 64 A
	Maximum Drain Source Voltage 250 V
	Series OptiMOS™ 3
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.45mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 64 nC @ 10 V
	Length 10.31mm
	Number of Elements per Chip 1
	Transistor Material Si
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 4.57mm

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Infineon OptiMOS™ 3 Series MOSFET, 64A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPB200N25N3GATMA1

This N-channel MOSFET is designed for efficient power management in various electronic applications, featuring a maximum continuous drain current of 64A and a voltage rating of 250V. Its robust thermal performance and low on-resistance contribute to effective electrical performance across a wide temperature range, making it suitable for high-frequency switching and synchronous rectification.

Features & Benefits

• Optimal gate charge x RDS(on) product enhances efficiency
• Low on-resistance minimises power loss during operation
• Operational temperature up to +175°C accommodates diverse applications
• Complies with RoHS and halogen-free standards for eco-friendly use
• Compact D2PAK design and surface mount facilitate integration
• Qualified according to JEDEC for reliability in target applications

Applications

• Used in power supplies for automation systems
• Appropriate for high-efficiency converters in renewable energy
• Employed in motor control for industrial machinery
• Ideal for synchronous rectification in desktop power supplies
• Applied in electric vehicles for effective energy management

What measures should be taken to ensure optimal performance during installation?

It is important to maintain an effective thermal management system to dissipate heat, ensuring the device operates within its specified temperature limits.

Can this component be used in applications requiring rapid switching?

Yes, it is suitable for high-frequency applications such as DC-DC converters and drivers due to its fast switching capabilities.

Is there a specific circuit design recommended for optimal use?

A proper gate driver circuit can enhance performance, particularly in terms of turn-on and turn-off times, which helps reduce switching losses.

What should be considered regarding environmental conditions during operation?

Ensure it is placed in an environment where temperatures remain within its operational limits of -55°C to +175°C to prevent thermal degradation.