Infineon OptiMOS™ 3 N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK IPB600N25N3GATMA1

Subtotal (1 reel of 1000 units)*

£1,110.00

(exc. VAT)

£1,330.00

(inc. VAT)

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Per Reel*
1000 +£1.11£1,110.00

*price indicative

RS Stock No.:
124-8755
Mfr. Part No.:
IPB600N25N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.31mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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