Infineon OptiMOS™ 3 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1
- RS Stock No.:
- 898-6870
- Mfr. Part No.:
- IPB200N25N3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£12.16
(exc. VAT)
£14.60
(inc. VAT)
FREE delivery for orders over £50.00
- 2,448 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 + | £6.08 | £12.16 |
*price indicative
- RS Stock No.:
- 898-6870
- Mfr. Part No.:
- IPB200N25N3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 64 A | |
Maximum Drain Source Voltage | 250 V | |
Series | OptiMOS™ 3 | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 300 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.31mm | |
Typical Gate Charge @ Vgs | 64 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 9.45mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.57mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 64 A | ||
Maximum Drain Source Voltage 250 V | ||
Series OptiMOS™ 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.31mm | ||
Typical Gate Charge @ Vgs 64 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ 3 Series MOSFET, 64A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPB200N25N3GATMA1
Features & Benefits
• Low on-resistance minimises power loss during operation
• Operational temperature up to +175°C accommodates diverse applications
• Complies with RoHS and halogen-free standards for eco-friendly use
• Compact D2PAK design and surface mount facilitate integration
• Qualified according to JEDEC for reliability in target applications
Applications
• Appropriate for high-efficiency converters in renewable energy
• Employed in motor control for industrial machinery
• Ideal for synchronous rectification in desktop power supplies
• Applied in electric vehicles for effective energy management
What measures should be taken to ensure optimal performance during installation?
Can this component be used in applications requiring rapid switching?
Is there a specific circuit design recommended for optimal use?
What should be considered regarding environmental conditions during operation?
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