Infineon OptiMOS™-T N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1
- RS Stock No.:
- 170-2295
- Mfr. Part No.:
- IPB64N25S320ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£3,050.00
(exc. VAT)
£3,660.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £3.05 | £3,050.00 |
*price indicative
- RS Stock No.:
- 170-2295
- Mfr. Part No.:
- IPB64N25S320ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 64 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | D2PAK (TO-263) | |
| Series | OptiMOS™-T | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Width | 10.25mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Height | 4.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 64 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Series OptiMOS™-T | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Width 10.25mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 67 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Height 4.4mm | ||
Minimum Operating Temperature -55 °C | ||
The Infineon IPB64N25S3-20 is the 250V, N-channel automotive MOSFET. The package type of the device is the D2PAK 3pin and 175°C operating temperature.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
AEC qualified
MSL1 up to 260°C peak reflow
Related links
- Infineon OptiMOS™-T N-Channel MOSFET 250 V, 3-Pin D2PAK IPB64N25S320ATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 250 V, 3-Pin D2PAK IPB200N25N3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1
- Vishay N-Channel MOSFET 200 V, 3-Pin D2PAK SUM90220E-GE3
- Infineon OptiMOS™-T N-Channel MOSFET 250 V, 3-Pin D2PAK IPB17N25S3100ATMA1
- Infineon N-Channel MOSFET 650 V, 7-Pin D2PAK IMBG65R022M1HXTMA1
- Infineon HEXFET N-Channel MOSFET 250 V, 3-Pin D2PAK IRFS4229TRLPBF
- Vishay N-Channel MOSFET 250 V, 3-Pin D2PAK SUM45N25-58-E3