N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK Vishay SUM90220E-GE3

RS Stock No.:: 134-9167
Mfr. Part No.:: SUM90220E-GE3
Brand:: Vishay

N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK Vishay SUM90220E-GE3

Available to back order for despatch 09/09/2024

Price Each (On a Reel of 800)

£1.127

(exc. VAT)

£1.352

(inc. VAT)

Units	Per unit	Per Reel*
800 +	£1.127	£901.60
*price indicative

RS Stock No.:: 134-9167
Mfr. Part No.:: SUM90220E-GE3
Brand:: Vishay

SUM90220E, N-Channel 200V 175°C MOSFET
ESD Control Selection Guide V1

RS Stock No.:: 134-9167
Mfr. Part No.:: SUM90220E-GE3
Brand:: Vishay

SUM90220E, N-Channel 200V 175°C MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	64 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	23.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	31.6 nC @ 10 V
Number of Elements per Chip	1
Width	9.65mm
Maximum Operating Temperature	+175 °C
Length	10.41mm
Forward Diode Voltage	1.5V
Height	4.82mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	64 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	23.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	31.6 nC @ 10 V
Number of Elements per Chip	1
Width	9.65mm
Maximum Operating Temperature	+175 °C
Length	10.41mm
Forward Diode Voltage	1.5V
Height	4.82mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK Vishay SUM90220E-GE3

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor