N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 Nexperia PMXB56ENZ
- RS Stock No.:
- 153-1892
- Mfr. Part No.:
- PMXB56ENZ
- Brand:
- Nexperia
1000 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 25)
£0.321
(exc. VAT)
£0.385
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 + | £0.321 | £8.025 |
| *price indicative | ||
- RS Stock No.:
- 153-1892
- Mfr. Part No.:
- PMXB56ENZ
- Brand:
- Nexperia
Technical Reference
Legislation and Compliance
Product Details
N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.
30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 49 mΩ
Very fast switching
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 49 mΩ
Very fast switching
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DFN1010D-3 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 87 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 8.33 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 3.6 nC @ 10 V |
| Width | 1.05mm |
| Length | 1.15mm |
| Maximum Operating Temperature | +150 °C |
| Height | 0.36mm |
| Minimum Operating Temperature | -55 °C |