Nexperia N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3 PMXB40UNEZ

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Subtotal (1 pack of 25 units)*

£4.325

(exc. VAT)

£5.20

(inc. VAT)

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25 +£0.173£4.33

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Packaging Options:
RS Stock No.:
153-1958
Mfr. Part No.:
PMXB40UNEZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

12 V

Package Type

DFN1010D-3

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

121 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

8.33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Number of Elements per Chip

1

Length

1.15mm

Width

1.05mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.36mm

Minimum Operating Temperature

-55 °C

12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters

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