SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-220
	Series	SuperFET II
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	168 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	208 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	4.7mm
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Length	10.67mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	16.3mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-220
	Series SuperFET II
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 168 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 208 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 4.7mm
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Length 10.67mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 16.3mm

onsemi SuperFET II N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FCP190N65F

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

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