N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220F onsemi FCPF650N80Z

RS Stock No.:: 864-7929
Mfr. Part No.:: FCPF650N80Z
Brand:: onsemi

N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220F onsemi FCPF650N80Z

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Price Each (In a Pack of 5)

£2.59

(exc. VAT)

£3.11

(inc. VAT)

Units	Per unit	Per Pack*
5 +	£2.59	£12.95

*price indicative

RS Stock No.:: 864-7929
Mfr. Part No.:: FCPF650N80Z
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	800 V
Series	SuperFET II
Package Type	TO-220F
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	530 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	30.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.9mm
Typical Gate Charge @ Vgs	27 nC @ 10 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	10.36mm
Height	16.07mm
Minimum Operating Temperature	-55 °C