onsemi SuperFET II N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220F FCPF650N80Z
- RS Stock No.:
- 864-7929
- Mfr. Part No.:
- FCPF650N80Z
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 864-7929
- Mfr. Part No.:
- FCPF650N80Z
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | TO-220F | |
Series | SuperFET II | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 530 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 30.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 4.9mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
Length | 10.36mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 16.07mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220F | ||
Series SuperFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 530 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 30.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.9mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 16.07mm | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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