ROHM AG185FGD3HRB N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK AG185FGD3HRBTL

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Subtotal (1 tape of 2 units)*

£2.07

(exc. VAT)

£2.484

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18£1.035£2.07
20 - 48£0.91£1.82
50 - 198£0.82£1.64
200 - 998£0.66£1.32
1000 +£0.645£1.29

*price indicative

RS Stock No.:
687-438
Mfr. Part No.:
AG185FGD3HRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

TO-252 (TL)

Series

AG185FGD3HRB

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM N channel power MOSFET designed for automotive applications. This device is tailored to provide efficient switching with a maximum drain-source voltage of 40V and a continuous drain current of 80A. It features a low on-resistance, ensuring minimal power loss during operation, which contributes to improved thermal management and performance in demanding environments. With a power dissipation capability of 96W, this MOSFET is suitable for various applications that require reliable and robust performance. Its Pb-free plating and RoHS compliance highlight 's commitment to environmentally friendly manufacturing. This part is AEC-Q101 qualified, ensuring it meets the stringent automotive standards for reliability and safety.

Low on resistance of 3.2mΩ maximises efficiency and reduces heat generation
Rated for a continuous drain current of 80A, suitable for robust applications
Provides a high power dissipation capability of 96W for demanding tasks
Designed for a maximum drain-source voltage of 40V ensuring versatility in applications
AEC Q101 qualified, ensuring high reliability in automotive use
Pb free plating and RoHS compliance reflect environmentally conscious production
Suitable for various automotive systems, enhancing system performance and longevity
Features a compact DPAK package for efficient space utilisation on PCB designs

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