ROHM AG191FLD3HRB N-Channel MOSFET, 80 A, 60 V, 3-Pin DPAK AG191FLD3HRBTL

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Subtotal (1 tape of 2 units)*

£1.71

(exc. VAT)

£2.052

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18£0.855£1.71
20 - 48£0.755£1.51
50 - 198£0.675£1.35
200 - 998£0.545£1.09
1000 +£0.535£1.07

*price indicative

Packaging Options:
RS Stock No.:
687-454
Mfr. Part No.:
AG191FLD3HRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252 (TL)

Series

AG191FLD3HRB

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM Power MOSFET is engineered for high-performance applications, providing exceptional efficiency with a maximum Drain-Source voltage of 60V and a continuous drain current of 80A. Designed for demanding automotive systems, this device features low on-resistance, ensuring reduced power loss and enhanced thermal management. Its robust construction includes AEC-Q101 qualification, making it suitable for use in rigorous automotive environments. With a multidimensional thermal resistance capability, this MOSFET effectively handles thermal stress, ensuring reliability under varying operational conditions. Ideal for engineers seeking a reliable component in high-efficiency applications, the AG191FLD3HRB stands out for its performance and operational integrity.

Low on resistance offers improved efficiency and reduces heat generation
Pb free plating conforms to RoHS standards for environmental safety
100% avalanche testing guarantees reliable performance under stress
AEC Q101 qualified, ensuring compliance with automotive industry standards
Supports a wide operating junction and storage temperature range from -55°C to 175°C
Flexible packaging specifications with tape and reel format for convenience in assembly
Integrated thermal resistance minimizes thermal concerns during operation
Supplied with precise gate charge characteristics for optimal switching performance

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