ROHM AG086FGD3HRB N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK AG086FGD3HRBTL

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Subtotal (1 tape of 2 units)*

£1.69

(exc. VAT)

£2.028

(inc. VAT)

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  • Shipping from 17 November 2025
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Units
Per unit
Per Tape*
2 - 18£0.845£1.69
20 - 48£0.745£1.49
50 - 198£0.67£1.34
200 - 998£0.54£1.08
1000 +£0.525£1.05

*price indicative

Packaging Options:
RS Stock No.:
687-456
Mfr. Part No.:
AG086FGD3HRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Series

AG086FGD3HRB

Package Type

TO-252 (TL)

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM Power MOSFET is engineered for high-performance applications, featuring a robust construction that ensures reliability and efficiency. With a maximum drain-source voltage of 40V and capable of handling continuous currents up to 80A, this device is an optimal solution for automotive systems and other demanding environments. Its low on-resistance of just 4.1mΩ facilitates minimal power loss during operation, making it particularly beneficial for power management tasks. Fully AEC-Q101 qualified, this MOSFET meets stringent automotive standards, ensuring consistent quality for demanding applications. The product supports efficient heat dissipation, allowing for a maximum power dissipation of 76W while maintaining a wide operational temperature range.

Low on resistance of 4.1mΩ enhances energy efficiency
AEC Q101 qualification assures automotive-grade reliability
Maximum continuous drain current of 80A caters to high load applications
Pulsed drain current capability reaches 160A for transient load handling
Supports gate-source voltage of ±20V for flexible control
Avalanche rated for increased operational safety
Thermal resistance specification aids in efficient heat management

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