ROHM AG501EGD3HRB P-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK AG501EGD3HRBTL

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Subtotal (1 tape of 2 units)*

£2.90

(exc. VAT)

£3.48

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18£1.45£2.90
20 - 48£1.275£2.55
50 - 198£1.145£2.29
200 - 998£0.925£1.85
1000 +£0.90£1.80

*price indicative

Packaging Options:
RS Stock No.:
687-359
Mfr. Part No.:
AG501EGD3HRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

TO-252 (TL)

Series

AG501EGD3HRB

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.

Offers low on resistance for reduced power loss and enhanced efficiency
AEC Q101 qualified, ensuring reliability for automotive and critical applications
Avalanche tested to guarantee performance under dynamic conditions
Supports a maximum power dissipation of 142W, compatible with high-performance designs
Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments
Pb free plating and RoHS compliant, meeting modern environmental standards
Optimised packaging specifications, including embedding options for automated assembly
Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events

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