ROHM RD3N03BAT P-Channel MOSFET, 30 A, 80 V, 3-Pin DPAK RD3N03BATTL1

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Subtotal (1 tape of 2 units)*

£1.25

(exc. VAT)

£1.50

(inc. VAT)

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  • Shipping from 17 November 2025
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Units
Per unit
Per Tape*
2 - 18£0.625£1.25
20 - 48£0.55£1.10
50 - 198£0.495£0.99
200 - 998£0.40£0.80
1000 +£0.39£0.78

*price indicative

Packaging Options:
RS Stock No.:
687-384
Mfr. Part No.:
RD3N03BATTL1
Brand:
ROHM
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Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

80 V

Series

RD3N03BAT

Package Type

TO-252 (TL)

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM P channel power MOSFET designed to deliver efficient operation in a variety of applications, including motor drives and switching circuits. With a maximum drain-source voltage of -80V and continuous drain current capabilities reaching -30A, this device is engineered for robust performance under demanding conditions. Its low on-resistance of 56mΩ ensures optimal efficiency, minimising energy losses during operation. Additionally, the TO-252 package allows for easy integration into electronic designs, providing versatility and reliability in compact form factors. The RD3N03BAT is also compliant with RoHS and halogen-free standards, making it a suitable choice for environmentally conscious designs.

Low on resistance for improved efficiency and reduced thermal management
High power capability within a compact TO-252 package for versatile application
RoHS and halogen-free compliance ensures environmental safety for modern electronics
Extensive testing, including Rg and UIS, guarantees reliable operation and performance
Wide operating temperature range of -55 to +150 °C supports various environmental conditions
Designed with reliable avalanche energy ratings for enhanced safety during transient conditions

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