Microchip VP0808 P-Channel MOSFET, 280 mA, 80 V, 3-Pin TO-92 VP0808L-G
- RS Stock No.:
- 649-535
- Mfr. Part No.:
- VP0808L-G
- Brand:
- Microchip
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.34
(exc. VAT)
£6.41
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.068 | £5.34 |
50 - 245 | £0.94 | £4.70 |
250 - 495 | £0.844 | £4.22 |
500 + | £0.668 | £3.34 |
*price indicative
- RS Stock No.:
- 649-535
- Mfr. Part No.:
- VP0808L-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | P | |
Maximum Continuous Drain Current | 280 mA | |
Maximum Drain Source Voltage | 80 V | |
Package Type | TO-92 | |
Series | VP0808 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type P | ||
Maximum Continuous Drain Current 280 mA | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-92 | ||
Series VP0808 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Microchip Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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