ROHM RD3E08BBJHRB P-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK RD3E08BBJHRBTL

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Subtotal (1 tape of 2 units)*

£2.76

(exc. VAT)

£3.32

(inc. VAT)

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  • Shipping from 17 November 2025
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Units
Per unit
Per Tape*
2 - 18£1.38£2.76
20 - 48£1.215£2.43
50 - 198£1.09£2.18
200 - 998£0.88£1.76
1000 +£0.86£1.72

*price indicative

Packaging Options:
RS Stock No.:
687-362
Mfr. Part No.:
RD3E08BBJHRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Series

RD3E08BBJHRB

Package Type

TO-252 (TL)

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.

Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss
Pulsed drain current capability of ±160A, accommodating high-demand applications
Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control
Assemblable in a DPAK package for efficient thermal management and compact footprint
Avalanche tested for improved reliability in high-stress electrical environments
AEC Q101 qualified, making it ideal for safety-critical automotive applications.

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