ROHM AG502EED3HRB P-Channel MOSFET, 78 A, 30 V, 3-Pin DPAK AG502EED3HRBTL
- RS Stock No.:
- 687-467
- Mfr. Part No.:
- AG502EED3HRBTL
- Brand:
- ROHM
Bulk discount available
Subtotal (1 tape of 2 units)*
£1.61
(exc. VAT)
£1.932
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | £0.805 | £1.61 |
| 20 - 48 | £0.71 | £1.42 |
| 50 - 198 | £0.635 | £1.27 |
| 200 - 998 | £0.515 | £1.03 |
| 1000 + | £0.50 | £1.00 |
*price indicative
- RS Stock No.:
- 687-467
- Mfr. Part No.:
- AG502EED3HRBTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 78 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | AG502EED3HRB | |
| Package Type | TO-252 (TL) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 78 A | ||
Maximum Drain Source Voltage 30 V | ||
Series AG502EED3HRB | ||
Package Type TO-252 (TL) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET designed for efficient and reliable energy management in automotive systems. Featuring a maximum drain-source voltage of -30V and continuous drain current capability of up to 78A, this device is ideal for demanding applications requiring robust power handling. Its low on-resistance of 8.5mΩ minimises power loss, contributing to enhanced thermal efficiency. Additionally, the MOSFET is qualified under AEC-Q101 standards, ensuring it meets rigorous automotive requirements for durability and performance. With excellent avalanche characteristics and a wide operational temperature range, the AG502EED3HRB ensures consistent performance under diverse conditions.
Robust construction with AEC Q101 qualification for automotive applications
Low on resistance of 8.5mΩ, optimising energy efficiency
Max continuous drain current of 78A enables handling of demanding loads
Wide operating temperature range from -55°C to 175°C for reliable performance
Thermal resistance of 1.94°C/W enhances heat dissipation capabilities
100% Avalanche tested, ensuring high reliability under transient conditions
Pb free plating and compliance with RoHS standards for environmentally-friendly design
Low on resistance of 8.5mΩ, optimising energy efficiency
Max continuous drain current of 78A enables handling of demanding loads
Wide operating temperature range from -55°C to 175°C for reliable performance
Thermal resistance of 1.94°C/W enhances heat dissipation capabilities
100% Avalanche tested, ensuring high reliability under transient conditions
Pb free plating and compliance with RoHS standards for environmentally-friendly design
Related links
- ROHM RD3E07BBJHRB P-Channel MOSFET 30 V, 3-Pin DPAK RD3E07BBJHRBTL
- ROHM P-Channel MOSFET 40 V, 8-Pin HSOP8 RS1G201ATTB1
- onsemi N-Channel MOSFET 30 V, 8-Pin SO-8FL NTMFS4C05NT1G
- Infineon N-Channel MOSFET 30 V, 8-Pin SuperSO8 5 x 6 BSC0904NSIATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin SuperSO8 5 x 6 ISC037N03L5ISATMA1
- ROHM RD3N03BAT P-Channel MOSFET 80 V, 3-Pin DPAK RD3N03BATTL1
- ROHM RD3E08BBJHRB P-Channel MOSFET 30 V, 3-Pin DPAK RD3E08BBJHRBTL
- ROHM P-Channel MOSFET 60 V, 3-Pin DPAK RD3L03BATTL1