ROHM AG091FLD3HRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL

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Subtotal (1 tape of 2 units)*

£1.65

(exc. VAT)

£1.98

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18£0.825£1.65
20 - 48£0.725£1.45
50 - 198£0.655£1.31
200 - 998£0.525£1.05
1000 +£0.515£1.03

*price indicative

Packaging Options:
RS Stock No.:
687-462
Mfr. Part No.:
AG091FLD3HRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

60V

Series

AG091FLD3HRB

Package Type

TO-252 (TL)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

76W

Maximum Operating Temperature

175°C

Height

2.3mm

Length

10.50mm

Width

6.80 mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The ROHM N channel Power MOSFET designed for automotive applications, providing exceptional efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current capacity of 80A, this MOSFET ensures optimal performance in demanding environments. Its low on-resistance of 7.5mΩ significantly reduces power losses, making it suitable for various automotive systems and high-current applications. The device is RoHS compliant with Pb-free plating, ensuring environmental safety while maintaining robust performance under stringent conditions.

Low on resistance for improved efficiency and reduced heat generation

AEC Q101 qualified, ensuring high reliability in automotive applications

100% avalanche tested for enhanced safety and durability

Wide operating junction temperature range from -55 to +175 °C for versatile use

Robust power dissipation capacity of 76W to handle significant loads

Tape packaging facilitates ease of handling and assembly in manufacturing environments

Embossed packaging specifications ensure secure dynamics during transport

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