ROHM RD3L08DBKHRB N-Channel MOSFET, 80 A, 60 V, 3-Pin DPAK RD3L08DBKHRBTL

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Subtotal (1 tape of 2 units)*

£1.63

(exc. VAT)

£1.956

(inc. VAT)

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  • Shipping from 17 November 2025
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Units
Per unit
Per Tape*
2 - 18£0.815£1.63
20 - 48£0.72£1.44
50 - 198£0.645£1.29
200 - 998£0.52£1.04
1000 +£0.51£1.02

*price indicative

Packaging Options:
RS Stock No.:
687-465
Mfr. Part No.:
RD3L08DBKHRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252 (TL)

Series

RD3L08DBKHRB

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM Power MOSFET is engineered for high-performance in demanding applications, offering reliable switching capabilities with low on-resistance and a robust breakdown voltage. Designed to handle up to 80A of continuous drain current and with a maximum drain-source voltage of 60V, this component ensures efficiency and durability. It is ideal for automotive electronics, lighting, and other power management systems, featuring Pb-free plating and is AEC-Q101 qualified, making it compliant with the latest industry standards. This MOSFET provides a combination of exceptional thermal performance and reliability, making it a suitable choice for engineers seeking to optimise their circuit designs.

Low on resistance of 7.5mΩ maximises power efficiency
AEC Q101 qualification ensures high reliability in automotive applications
Passes 100% avalanche testing for enhanced durability
Capable of handling continuous drain current up to 80A
Maximum drain-source voltage rating of 60V provides substantial overhead
Pb free plating adheres to RoHS compliance, promoting environmental responsibility
Versatile packaging ensures compatibility across various application designs
Ideal for use in ADAS, info systems, and body control applications
Features low gate charge characteristics for faster switching times

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