Microchip DN2625 Silicon N-Channel MOSFET, 1.1 A, 250 V Depletion, 3-Pin DPAK DN2625K4-G

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Subtotal (1 reel of 2000 units)*

£2,568.00

(exc. VAT)

£3,082.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +£1.284£2,568.00

*price indicative

RS Stock No.:
598-727
Mfr. Part No.:
DN2625K4-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

250 V

Series

DN2625

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Depletion

Transistor Material

Silicon

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Very low gate threshold voltage
Designed to be source driven
Low switching losses
Low effective output capacitance
Designed for inductive loads

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