Microchip DN2540 N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243AA DN2540N8-G
- RS Stock No.:
- 177-3294
- Mfr. Part No.:
- DN2540N8-G
- Brand:
- Microchip
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£8.69
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£10.43
(inc. VAT)
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In Stock
- 1,580 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 20 | £0.869 | £8.69 |
| 30 - 90 | £0.824 | £8.24 |
| 100 + | £0.744 | £7.44 |
*price indicative
- RS Stock No.:
- 177-3294
- Mfr. Part No.:
- DN2540N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 mA | |
| Maximum Drain Source Voltage | 400 V | |
| Package Type | TO-243AA | |
| Series | DN2540 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 4.6mm | |
| Width | 2.6mm | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.8V | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 mA | ||
Maximum Drain Source Voltage 400 V | ||
Package Type TO-243AA | ||
Series DN2540 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 4.6mm | ||
Width 2.6mm | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.8V | ||
- COO (Country of Origin):
- TW
DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features:
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown Low input and output leakage
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown Low input and output leakage
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