Microchip DN2540 N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243AA DN2540N8-G

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Subtotal (1 reel of 2000 units)*

£1,170.00

(exc. VAT)

£1,404.00

(inc. VAT)

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Per unit
Per Reel*
2000 +£0.585£1,170.00

*price indicative

RS Stock No.:
177-2815
Mfr. Part No.:
DN2540N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

400 V

Package Type

TO-243AA

Series

DN2540

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

25 Ω

Channel Mode

Depletion

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.6mm

Width

2.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.8V

Height

1.6mm

COO (Country of Origin):
US
DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Additional Features:
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown Low input and output leakage

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