Microchip N-Channel MOSFET, 120 mA, 400 V Depletion, 3-Pin TO-92 DN2540N3-G

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

£7.09

(exc. VAT)

£8.51

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 110 unit(s) ready to ship
  • Plus 10 unit(s) ready to ship from another location
  • Plus 210 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 20£0.709£7.09
30 - 90£0.674£6.74
100 +£0.613£6.13

*price indicative

Packaging Options:
RS Stock No.:
829-3235
Mfr. Part No.:
DN2540N3-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

400 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

25 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

4.19mm

Length

5.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

5.33mm

Supertex N-Channel Depletion Mode MOSFET Transistors


The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features


High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications


Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

The Microchip DN2540 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 400V and static drain-to-source on-state resistance of 25Ω.

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package


MOSFET Transistors, Microchip

Related links