Infineon IMBG65 Type N-Channel MOSFET, 170 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- RS Stock No.:
- 351-987
- Mfr. Part No.:
- IMBG65R009M1HXTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£35.40
(exc. VAT)
£42.48
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,000 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 - 9 | £35.40 |
| 10 - 99 | £31.86 |
| 100 + | £29.38 |
*price indicative
- RS Stock No.:
- 351-987
- Mfr. Part No.:
- IMBG65R009M1HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Output Power | 555W | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-7 | |
| Series | IMBG65 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 10.2mm | |
| Width | 9.45 mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Output Power 555W | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-7 | ||
Series IMBG65 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 10.2mm | ||
Width 9.45 mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Superior gate oxide reliability
Increased avalanche capability
Compatible with standard drivers
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