Infineon IMBG65 SiC N-Channel MOSFET, 170 A, 650 V, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1

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£35.40

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£42.48

(inc. VAT)

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1 - 9£35.40
10 - 99£31.86
100 +£29.38

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RS Stock No.:
351-987
Mfr. Part No.:
IMBG65R009M1HXTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

650 V

Package Type

PG-TO263-7

Series

IMBG65

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Superior gate oxide reliability
Increased avalanche capability
Compatible with standard drivers

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