Name: Infineon IMB SiC N-Channel MOSFET, 91 A, 650 V, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1
Brand: Infineon
SKU: 349-325
Price: 14.93 GBP
Availability: OutOfStock

The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever-growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.

Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	91 A
	Maximum Drain Source Voltage	650 V
	Package Type	PG-TO263-7
	Series	IMB
	Mounting Type	Surface Mount
	Pin Count	7
	Channel Mode	Enhancement
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 91 A
	Maximum Drain Source Voltage 650 V
	Package Type PG-TO263-7
	Series IMB
	Mounting Type Surface Mount
	Pin Count 7
	Channel Mode Enhancement
	Transistor Material SiC
	Number of Elements per Chip 1

Infineon IMB SiC N-Channel MOSFET, 91 A, 650 V, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1

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