Infineon IMB SiC N-Channel MOSFET, 41 A, 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1

Bulk discount available

Subtotal (1 unit)*

£6.85

(exc. VAT)

£8.22

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£6.85
10 - 99£6.17
100 - 499£5.69
500 - 999£5.27
1000 +£4.73

*price indicative

RS Stock No.:
349-328
Mfr. Part No.:
IMBG65R050M2HXTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

41 A

Maximum Drain Source Voltage

650 V

Package Type

PG-TO263-7

Series

IMB

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
MY
The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever-growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.

Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance

Related links