Infineon IMB SiC N-Channel MOSFET, 238 A, 650 V, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1
- RS Stock No.:
- 349-322
- Mfr. Part No.:
- IMBG65R007M2HXTMA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£32.01
(exc. VAT)
£38.41
(inc. VAT)
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- Shipping from 04 May 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £32.01 |
| 10 - 99 | £28.81 |
| 100 + | £26.57 |
*price indicative
- RS Stock No.:
- 349-322
- Mfr. Part No.:
- IMBG65R007M2HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 238 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | IMB | |
| Package Type | PG-TO263-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 238 A | ||
Maximum Drain Source Voltage 650 V | ||
Series IMB | ||
Package Type PG-TO263-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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