Name: Infineon IMB SiC N-Channel MOSFET, 238 A, 650 V, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1
Brand: Infineon
SKU: 349-322
Price: 38.41 GBP
Availability: OutOfStock

The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.

Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	238 A
	Maximum Drain Source Voltage	650 V
	Series	IMB
	Package Type	PG-TO263-7
	Mounting Type	Surface Mount
	Pin Count	7
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 238 A
	Maximum Drain Source Voltage 650 V
	Series IMB
	Package Type PG-TO263-7
	Mounting Type Surface Mount
	Pin Count 7
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material SiC

Infineon IMB SiC N-Channel MOSFET, 238 A, 650 V, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1

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