Infineon AIK SiC N-Channel MOSFET, 650 V, 7-Pin PG-TO263-7 AIKBE50N65RF5ATMA1
- RS Stock No.:
- 349-189
- Mfr. Part No.:
- AIKBE50N65RF5ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 349-189
- Mfr. Part No.:
- AIKBE50N65RF5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Drain Source Voltage | 650 V | |
Package Type | PG-TO263-7 | |
Series | AIK | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Channel Mode | Enhancement | |
Transistor Material | SiC | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-TO263-7 | ||
Series AIK | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC Hybrid Discrete with TRENCHSTOP 5 Fast Switching IGBT and CoolSiC schottky diode G5 is designed for automotive. It has best in class efficiency in hard switching and resonant topologies.
650 V breakdown voltage
CoolSiCTM Schottky diode G5
Low gate charge QG
Kelvin emitter connection for optimized switching performance
CoolSiCTM Schottky diode G5
Low gate charge QG
Kelvin emitter connection for optimized switching performance
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