Infineon IMBG65 SiC N-Channel MOSFET, 34.9 A, 650 V, 7-Pin PG-TO263-7 IMBG65R060M2H

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Subtotal (1 pack of 2 units)*

£11.48

(exc. VAT)

£13.78

(inc. VAT)

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2 - 18£5.74£11.48
20 - 198£5.165£10.33
200 +£4.765£9.53

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RS Stock No.:
351-959
Mfr. Part No.:
IMBG65R060M2H
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

34.9 A

Maximum Drain Source Voltage

650 V

Series

IMBG65

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings
Highest reliability
Enables top efficiency and power density
Ease of use
Full compatibility with existing vendors
Allows designs without fan or heatsink

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