Infineon IMBG65 SiC N-Channel MOSFET, 158 A, 650 V, 7-Pin PG-TO263-7 IMBG65R010M2H
- RS Stock No.:
- 351-964
- Mfr. Part No.:
- IMBG65R010M2H
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 351-964
- Mfr. Part No.:
- IMBG65R010M2H
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 158 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-TO263-7 | |
| Series | IMBG65 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 158 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-TO263-7 | ||
Series IMBG65 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Enables BOM savings
Highest reliability
Enables top efficiency and power density
Ease of use
Full compatibility with existing vendors
Allows designs without fan or heatsink
Highest reliability
Enables top efficiency and power density
Ease of use
Full compatibility with existing vendors
Allows designs without fan or heatsink
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