Infineon ISG N-Channel MOSFET, 299 A, 40 V, 10-Pin PG-VITFN-10 ISG0613N04NM6HATMA1
- RS Stock No.:
- 349-393
- Mfr. Part No.:
- ISG0613N04NM6HATMA1
- Brand:
- Infineon
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- RS Stock No.:
- 349-393
- Mfr. Part No.:
- ISG0613N04NM6HATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 299 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PG-VITFN-10 | |
| Series | ISG | |
| Mounting Type | Surface Mount | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 299 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-VITFN-10 | ||
Series ISG | ||
Mounting Type Surface Mount | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in a scalable power block package. Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration.
Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
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