Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-VITFN-10 ISG0613N04NM6HATMA1
- RS Stock No.:
- 349-393
- Mfr. Part No.:
- ISG0613N04NM6HATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£6.92
(exc. VAT)
£8.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.46 | £6.92 |
| 20 - 198 | £3.115 | £6.23 |
| 200 - 998 | £2.875 | £5.75 |
| 1000 - 1998 | £2.665 | £5.33 |
| 2000 + | £2.39 | £4.78 |
*price indicative
- RS Stock No.:
- 349-393
- Mfr. Part No.:
- ISG0613N04NM6HATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 299A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-VITFN-10 | |
| Series | ISG | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 0.88mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249‑2‑21, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 299A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-VITFN-10 | ||
Series ISG | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 0.88mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249‑2‑21, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in a scalable power block package. Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration.
Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Related links
- Infineon ISG N-Channel MOSFET 40 V, 10-Pin PG-VITFN-10 ISG0613N04NM6HSCATMA1
- Infineon ISG N-Channel MOSFET 100 V, 10-Pin PG-VITFN-10 ISG0616N10NM5HSCATMA1
- Infineon IPD N-Channel MOSFET 600 V, 10-Pin PG-HDSOP-10-1 IPDD60R180CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 10-Pin PG-HDSOP-10-1 IPDD60R037CM8XTMA1
- Infineon IAU N-Channel MOSFET 40 V, 10-Pin PG-LHDSO-10 IAUCN04S6N017TATMA1
- Infineon IAU N-Channel MOSFET 40 V, 10-Pin PG-LHDSO-10-3 IAUCN04S6N007TATMA1
- Infineon IAU N-Channel MOSFET 40 V, 10-Pin PG-LHDSO-10 IAUCN04S6N009TATMA1
- Infineon IAU N-Channel MOSFET 40 V, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1